Surface reconstructions during growth of GaAs_1-xBi_x alloys by MBE ,M. Masnadi-Shirazi, D.A. Beaton, R.B. Lewis, X.F. Lu, T. Tiedje, J. Cryst. Growth 338, 80-84 (2012)

An in-situ electron diffraction study of surface reconstructions on (001) oriented GaAs_1-xBi_x films has been carried out during growth by molecular beam epitaxy on GaAs substrates in the temperature range from 250 C to 400 C. We observe (1x3), (2x3) and (2x4) reconstructions on both GaAs and GaAs_1-xBi_x surfaces. A (2x1) surface reconstruction is observed in the presence of Bi at low As₂:Ga flux ratios. Higher Bi incorporation and stronger photoluminescence were observed for GaAs_1-xBi_x films grown on (2x1) reconstructed surfaces, compared to samples grown on (1x3) surfaces. The location of the various surface phases has been mapped out as a function of temperature, Bi flux and As₂:Ga flux ratio.